CMP(展板形式) 化学机械抛光(Chemical Mechanical Planarization,CMP)是集成电路生产线中的核心工艺之一,技术难度仅次于光刻技术。
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...K为基础的应用,展示重点如下; 以VICTREX PEEK为基础的化学机械研磨环应用化学机械研磨(Chemical Mechanical Planarization,CMP)是半导体晶圆制造过程中的关键步骤,VICTREX PEEK拥有高纯度、耐磨耗性与耐化学性,符合并满足...
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化学机械抛光(Chemical mechanical polishing,简称CMP),又称化学机械平坦化(Chemical mechanical planarization),是提供超大规模集成电路(ULSI)制造过程中表面平坦化的一种新技术,于1965年首次由美国的Monsanto提出,最初是用于获取高质量的...
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The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.
化学机械抛光(CMP)在半导体工业内获得了广泛的赞同,对控制形貌起伏的硅片表面当作首选方法。
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