... 化学机械抛光 chemical-mechanical polish(CMP) 化学机械平坦化 chemical-mechanical planarization 键合 bonding ...
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Chemical Mechanical Planarization 化学机械抛光 ; 化学机械研磨 ; 又称化学机械平坦化
以上来源于: WordNet
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.
化学机械抛光(CMP)在半导体工业内获得了广泛的赞同，对控制形貌起伏的硅片表面当作首选方法。
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