在众多的平坦化技术中，目前唯一能获得全局平面化效果的是化学机械平坦化（Chemical Mechanical Planarization CMP）。 随着集成电路逐渐采用小尺寸、高聚集化的多层立体布线后，光刻工艺中对解析度和焦点深度（即景深）的限制越来越高，因此对硅片...
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The use of different barrier slurries for copper chemical mechanical planarization CMP creates a challenge for post-CMP cleaning.
铜化学机械平面化不同阻挡层浆料的应用引起了铜CMP后清洗的问题。
At the present time, chemical mechanical planarization (CMP) is the most effective technology for global and local planarization of the wafer in IC manufacturing.
目前，化学机械抛光技术(CMP)被认为是能够实现晶圆表面局部平坦化和全局平坦化的最佳方法。
Chemical mechanical planarization (CMP) has gained wide acceptance within the semiconductor industry as the preferred method for controlling wafer topography.
化学机械抛光(CMP)在半导体工业内获得了广泛的赞同，对控制形貌起伏的硅片表面当作首选方法。
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