技术介绍基于宽带隙(WBG)材料、具体来说是单极材料(例如比如碳化硅(SiC)和氮化镓(GaN))的半导体开关因这些材料的固有优点(例如，比如在高操作温度下的低泄...
基于140个网页-相关网页
当内部结构的介电常数增大时，在旋转操作下高频区产生了一系列较宽带隙。
When the dielectric constant of the internal structure is increased, there are many wider band gaps in the high-frequency area.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
除超硬性质以外，这些材料大都具有宽带隙、高温稳定性、化学惰性等优良的物理化学性质。
Other interesting properties of these materials include their wide band gap, stability under high temperature and chemical inertness.
应用推荐