当内部结构的介电常数增大时，在旋转操作下高频区产生了一系列较宽带隙。
When the dielectric constant of the internal structure is increased, there are many wider band gaps in the high-frequency area.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
除超硬性质以外，这些材料大都具有宽带隙、高温稳定性、化学惰性等优良的物理化学性质。
Other interesting properties of these materials include their wide band gap, stability under high temperature and chemical inertness.
分析结果表明，宽带隙平面薄膜结构用作场致电子发射阴极，具有发射电压的阈值低，发射电子的能量分布范围小等优点。
The study result shows that the planar film structure is conformable for FEE cathode, because it has low voltage threshold and small range of energy distribution of the emitted electrons.
电子能带结构计算表明sc - C20为宽带隙(4.20eV)半导体型碳，并且随着压力升高带隙呈现增大的趋势，sc - C20带隙的大小及变化规律与金刚石相似。
Electronic band structure calculations show that sc-C20 is a semiconductor with wide band gap of 4.20 eV, and the gap increase with pressure, similar to that of diamond.
本文设计了一种新型基于哑铃型光子带隙（PBG）的宽带高增益E形贴片天线。
This paper presents a new wide-band and high-gain E-shaped patch antenna based on dumbbell-shaped PBG structure.
本文设计了一种新型基于哑铃型光子带隙（PBG）的宽带高增益E形贴片天线。
This paper presents a new wide-band and high-gain E-shaped patch antenna based on dumbbell-shaped PBG structure.
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