... carrier pair generation 载劣对发生 carrier recombination 载劣复合 carrier recovery 载体恢复 ...
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Carrier recombination rate 载流子复合率
carrier recombination time 载流子复合时间
current carrier recombination 载流子复合
minority carrier recombination 少数载流子复合
nonradiative carrier recombination 点缺陷反应
charge carrier recombination zone 载流子复合区
·2,447,543篇论文数据，部分数据来源于NoteExpress
A discussion of the implications of the new SEMI standards for carrier recombination measurements lifetime in silicon.
针对SEMI最新制订载子合复寿命量测标准的内含意义及讨论。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
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