A discussion of the implications of the new SEMI standards for carrier recombination measurements lifetime in silicon.
针对SEMI最新制订载子合复寿命量测标准的内含意义及讨论。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。
But as the well width increase, level filling is the main reason for the red-shift of spectrum, Auger recombination and carrier delocalization are the main reason for lower efficiency.
当阱宽较大时，能级填充是导致光谱红移的主要原因，俄歇复合与载流子离域是导致效率下降的主要原因。
In a crystal at equilibrium a dynamic balance exists between carrier generation and recombination.
载流子的产生与复合处于动态平衡之中。
In a crystal at equilibrium a dynamic balance exists between carrier generation and recombination.
载流子的产生与复合处于动态平衡之中。
应用推荐