Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用这些结果讨论一些薄片的少子寿命和表面复合速度。
This paper presents a new solution of minority carrier continuity equation for a wafer with different surface recombination velocity on its two surfaces.
本文给出了有相异表面复合速度时半导体薄片少子连续方程的一种新解法。
This paper calculates the expression between minority-carrier lifetime and switching time in short diode by analyzing the continuity equation when considering the surface recombination.
并使用连续性方程，在考虑表面复合过程的情况下，提出了短二极管的少子寿命计算公式。
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