结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；

The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;

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利用泊松方程（零偏压时耗尽层宽度作为边界条件）积分计算出其电场分布、电势分布等重要结特性。

Some important characteristics, such as build-in electric field distribution, build-in potential distribution were calculated by poisson′equation.

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用此一性质可将偏置电压调制为零省去偏置系统，利于系统集成，为实现无偏压双稳系统指明了方向。

Thus, the bias voltage could be modulated to be 0. This saved the bias setup is benefited to system integration and pointed out way of realizing biasless bistable device.

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