结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；
The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;
利用泊松方程（零偏压时耗尽层宽度作为边界条件）积分计算出其电场分布、电势分布等重要结特性。
Some important characteristics, such as build-in electric field distribution, build-in potential distribution were calculated by poisson′equation.
用此一性质可将偏置电压调制为零省去偏置系统，利于系统集成，为实现无偏压双稳系统指明了方向。
Thus, the bias voltage could be modulated to be 0. This saved the bias setup is benefited to system integration and pointed out way of realizing biasless bistable device.
用此一性质可将偏置电压调制为零省去偏置系统，利于系统集成，为实现无偏压双稳系统指明了方向。
Thus, the bias voltage could be modulated to be 0. This saved the bias setup is benefited to system integration and pointed out way of realizing biasless bistable device.
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