可控硅器件主要用在开关方面，使器件从关闭或是阻断的状态转换为开启或是导通的状态，反之亦然。可控硅整流器件是一种非常重要的功率器件，用来做高电压和高电流的控制。
How stray inductance and forward conduction of diode result in unequal blocking voltage distribution during every commutation between different switching states in five-level inverter based on hybrid clamping technology is analyzed in detail.
本文详细分析了详细分析了在混合箝位型五电平逆变器的各种开关切换过程中,杂散电感储能和二极管单向箝位如何引起IGBT阻断电压不平衡。
参考来源 - 关于混合箝位型五电平逆变器的IGBT阻断电压平衡、数字控制及脉宽调制方法的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。
In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed.
因此，如何在得到足够高的阻断电压（或阻断增益）的同时能有效减小关断损耗，成为目前急待研究的一个重要理论问题。
Therefore, it is an important theoretical focus that how to obtain the enough high block voltage or block gain meanwhile resolves the wastage efficiently in turn-off transient.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
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