提出了阻断电压设计中关于基区宽度和基区杂质浓度选择的简化公式。
In the design of blocking voltage capability, the simplified formulas for the base region thickness and for the choice of doping concentrations are proposed.
因此，如何在得到足够高的阻断电压（或阻断增益）的同时能有效减小关断损耗，成为目前急待研究的一个重要理论问题。
Therefore, it is an important theoretical focus that how to obtain the enough high block voltage or block gain meanwhile resolves the wastage efficiently in turn-off transient.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大RMS电压21v。最大直流阻断电压40v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 40v. Max RMS voltage 21v. Max DC blocking voltage 40v. Current 1.0a.
肖特基势垒整流器。最大的经常峰值反向电压40v。最大RMS电压21v。最大直流阻断电压40v。电流1.0A。
Schottky barrier rectifier. Max recurrent peak reverse voltage 40v. Max RMS voltage 21v. Max DC blocking voltage 40v. Current 1.0a.
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