脉冲时间参数对电沉积铜薄膜性能的影响 关键词：铜互连、脉冲电镀、电阻率、晶粒尺寸、表面粗糙度 [gap=945]Key words：copper interconnect，pulse plating，resistivity，grain size，surface roughness
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有机添加剂对铜互连线脉冲电镀的影响 关键词：铜互连；添加剂；脉冲电镀；粗糙度；极化 [gap=960]Key words：Cu interconnect；additives；pulse electroplating；roughness；polarization
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The main purpose of the article is to study the reliability of copper interconnection.
本论文研究了ULSI中铜互连的可靠性问题。
参考来源 - ULSI中铜互连线可靠性的研究Thermo-elastic stress is a very important factor that influences the reliability of Copper interconnects.
热应力是影响铜互连结构可靠性的一个重要方面。
参考来源 - AirWhen the IC reaches 0.13um technology node,the technology of Cu interconnects associated with low-k material become to replace the Al interconnects.
到了0.13微米线宽技术阶段后,与低介电系数介质相结合的铜互连技术逐步代替铝互连。
参考来源 - 0.13微米铜互连工艺派工系统控制等待时间和降低缺陷的研究The thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures.
利用计算机模拟了温度场变化引起的铜互连线中热应力分布。 模拟结果显示在铜互连线中存在较大的应力并且铜互连线沟槽结构的变化对热应力的分布有影响。
参考来源 - ULSI铜互连线微观结构和应力研究·2,447,543篇论文数据，部分数据来源于NoteExpress
本发明还进一步提供了上述存储单元在铜互连工艺中的集成制备方法。
The invention further provides an integrated preparation method for the memory unit in the copper interconnection process.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性，并对新的研究方向做了介绍。
The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
介绍了UL SI多层铜互连线中的碟形坑问题，对其产生的原因及影响因素进行了分析。
Dishing problem of copper multilayer interconnection in ULSI was introduced, and the reasons and influencing factors were analyzed.
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