Based on 3.0um Al-gate process and studied the characteristics of the process, adopt Silicon Local Oxidation and P-N junction technology to realize device isolation. We developed a new technology: 2.0um Al-gate process, conquered roughness issue which caused by metal etch.
在深入研究了铝栅工艺特性的基础上,采用硅的局部氧化工艺与P-N结隔离工艺相结合的技术,成功地开发出2.0um超小型铝栅工艺,克服了3.0um工艺中栅控电压能力弱、金属刻蚀工艺复杂等技术难题,减小了漏电的风险并获得了很高的良品率。
参考来源 - 铝栅工艺特征尺寸小型化的研究与应用·2,447,543篇论文数据，部分数据来源于NoteExpress
本文以金属刻蚀去胶腔为背景，简述干刻清洗工艺开发和评价过程。
Based on ash chamber of metal etch this paper describes the full process of dry clean development and evaluation.
去除热损伤的方法是仔细切削本体金属，然后，再做一次回火刻蚀检查，确保切削工作没有产生进一步的热损伤。
Heat damage generally is removed by carefully machining the base metal. Afterward, another temper etch inspection is done to ensure that the machining did not create more heat damage.
金属极板还被深度刻蚀，从而极大地扩展了其表面的面积。
The metal plate is also deeply etched so as greatly to increase its surface area.
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