本文以金属刻蚀去胶腔为背景，简述干刻清洗工艺开发和评价过程。
Based on ash chamber of metal etch this paper describes the full process of dry clean development and evaluation.
去除热损伤的方法是仔细切削本体金属，然后，再做一次回火刻蚀检查，确保切削工作没有产生进一步的热损伤。
Heat damage generally is removed by carefully machining the base metal. Afterward, another temper etch inspection is done to ensure that the machining did not create more heat damage.
金属极板还被深度刻蚀，从而极大地扩展了其表面的面积。
The metal plate is also deeply etched so as greatly to increase its surface area.
根据目前的实验研究报道，这种周期结构金属薄膜通常利用聚焦离子束刻蚀工艺来获得，器件的光学响应在可见光波段和近红外波段。
In most of the experiments reported to date, the perforated metal films were fabricated by the focused-ion-beam method, and their transmission enhancement was in the visible and near-infrared regions.
本文提出了一种基于“沾笔”纳米刻蚀和电化学还原技术在表面上制备金属及半导体纳米结构的普适性方法。
A general approach for fabricating metallic and semiconducting nanostructures has been developed based on "dip pen" nanolithography combined with electrochemical reduction of water soluble salts.
难熔金属和贵金属组合的这一层薄膜使刻蚀成为一个艰巨任务。
The combination of refractory and noble metals in a single layer makes etching a formidable task.
制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。
The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.
这是伦敦金属交易所有意谋求刻蚀授权的新的联合合资企业。
It is the intention of the LME to seek RIE authorisation for the new joint venture.
现有的刻蚀形成金属线时的第三阶段刻蚀采用了固定时间的刻蚀，极易造成金属层刻蚀不足或过刻蚀的问题。
The third stage etching in current method is a time-fixed etching, which easily causes under etching or over etching of the metal layer.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
模拟结果为用PS球刻蚀技术制备金属纳米孔阵列的实验提供了理论支持。
The simulation results provide a theoretic guide for the fabrication of metallic nano-hole array by PS sphere's etching and vacuum depositing technology.
本发明还公布了与光成像组合物配合使用，对玻璃，硅晶片、金属基材等进行深度刻蚀的化学刻蚀剂。
The invention also discloses a chemical etching agent matched with the compound to take deep etch to glass, silicon water and metal material.
本发明还公布了与光成像组合物配合使用，对玻璃，硅晶片、金属基材等进行深度刻蚀的化学刻蚀剂。
The invention also discloses a chemical etching agent matched with the compound to take deep etch to glass, silicon water and metal material.
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