将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。
The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.
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