介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
这种结构使载流子在接触界面两边均能维持其平衡值。
This structure satisfies the equilibrium condition of carrier density at the contact interface for both holes and electrons.
载流子的产生与复合处于动态平衡之中。
In a crystal at equilibrium a dynamic balance exists between carrier generation and recombination.
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