介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。
The measurement results of complex dielectric constants of low loss and thin flake materials, conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced.
这种结构使载流子在接触界面两边均能维持其平衡值。
This structure satisfies the equilibrium condition of carrier density at the contact interface for both holes and electrons.
载流子的产生与复合处于动态平衡之中。
In a crystal at equilibrium a dynamic balance exists between carrier generation and recombination.
本文简略地介绍处理半导体中热载流子输运的一个解析方法——平衡方程方法。
We give a brief review of a balance-equation approach to hot carrier transport in semiconductors.
确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。
The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。
Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained.
文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。
Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained.
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