分析了这些缺陷中心的本质。

The nature of the defect centers was analyzed as well.

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通过计算电子由一种缺陷中心向另一种缺陷中心的跳跃几率，解释了非晶半导体中的低温带隙跳跃导电问题。

The hopping conduction in energy gap of amorphous semiconductors at low temperature is explained by calculating hopping probability when an electron hops from one defect center to the other.

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集成的缺陷和性能管理能够使单个管理保护下的操作中心发生突变。

Integrated fault and performance management enables consolidation of operations centers under a single management umbrella.

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