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网络释义专业释义

  Program disturb

4.3 STI对编程串扰(Program disturb)的影响 95-98 4.3.1 编程串扰实验结果 96

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  • program disturb - 引用次数：4

    With given program condition, Vt could higher than 6V after 0.1ms program and Vt decrease could lower than 0.1V after control gate or drain stress 10s, so cell program speed and program disturb characteristic could reach target.

    在一定的编程条件下,编程0.1ms时器件的阈值电压能够大于6V,控制栅或漏极加电压10s时阈值电压退化量小于0.1V,因此器件的编程速度和编程串扰特性能够满足要求。

    参考来源 - 0.5μm OTP工艺开发与器件特性研究

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双语例句

  • 针对目前多位非挥发存储器存在的编程功耗大、比特间串扰严重、编程窗口小等缺陷，本论文提出一种新型多位非挥发存储器件结构。

    Due to the disadvantages of recent multi-bit memory, for example high programming power, cross talk between two bits, small programming window, et al, a novel multi-bit memory device is proposed.

    youdao

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