针对目前多位非挥发存储器存在的编程功耗大、比特间串扰严重、编程窗口小等缺陷，本论文提出一种新型多位非挥发存储器件结构。
Due to the disadvantages of recent multi-bit memory, for example high programming power, cross talk between two bits, small programming window, et al, a novel multi-bit memory device is proposed.
针对目前多位非挥发存储器存在的编程功耗大、比特间串扰严重、编程窗口小等缺陷，本论文提出一种新型多位非挥发存储器件结构。
Due to the disadvantages of recent multi-bit memory, for example high programming power, cross talk between two bits, small programming window, et al, a novel multi-bit memory device is proposed.
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