磁阻效应(Magnetoresistance Effects)的定义:是指某些金属或半导体的电阻值随外加磁场变化而变化的现象。金属或半导体的载流子在磁场中运动时,由于受到电磁场的变化产生的洛伦兹力作用,产生了磁阻效应。
磁阻效应（Magnetoresistance Effects）是指某些金属或半导体的电阻值随外加磁场变化而变化的现象。
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... magnetoresistance磁阻 magnetoresistiveeffect磁阻效应 magnetostrictivedelayline磁致伸缩延迟线 ...
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... magnetoresistance 磁阻 magnetoresistive effect 磁阻效应 magnetoresistor 磁阻器 ...
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巨磁阻效应 Giant Magnetoresistance ; GMR ; GMR effect ; Giant Magnetoresistance Effect
磁阻效应磁强计 magneto resistive magnetometer
薄膜磁阻效应 thin film magnetic-resistance effect
巨磁阻效应用于读取头 read-out head
具有庞磁阻效应 colossal magnetoresistance
命名为巨磁阻效应 Giant Magneto-Resistive ; GMR
庞磁阻效应 large magnetoresistance
而巨磁阻效应 giant magnetoresistance ; GMR
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导出了金刚石膜磁阻效应的理论计算公式，计算结果和实验相一致。
The calculation equation of MR effect has been obtained. The theoretical calculation is consistent with experimental result.
本发明提供了一种具有低ra但高MR比的磁阻效应元件的制造方法以及制造设备。
This invention provides a method for manufacturing a magnetoresistance element having a high MR ratio despite low ra and an apparatus for manufacturing a magnetoresistance element.
本发明提供一种能够防止短路发生的监控元件和磁阻效应元件基板以及监控元件的制造方法。
Provided is a monitor element and a magneto-resistance effect element substrate which can be prevented from short circuits, and also to provide a method of manufacturing the monitor element.
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