导出了金刚石膜磁阻效应的理论计算公式，计算结果和实验相一致。
The calculation equation of MR effect has been obtained. The theoretical calculation is consistent with experimental result.
本发明提供了一种具有低ra但高MR比的磁阻效应元件的制造方法以及制造设备。
This invention provides a method for manufacturing a magnetoresistance element having a high MR ratio despite low ra and an apparatus for manufacturing a magnetoresistance element.
本发明提供一种能够防止短路发生的监控元件和磁阻效应元件基板以及监控元件的制造方法。
Provided is a monitor element and a magneto-resistance effect element substrate which can be prevented from short circuits, and also to provide a method of manufacturing the monitor element.
由于巨磁阻效应材料在磁记录设备和传感器的潜在应用，具有该效应的材料得到了广泛地研究。
Materials with giant magnetoresistance effect (GMR) have been extensively studied because of their potential applications in magnetic recording and sensors.
研究了磁阻效应的扭矩信号处理方法，分析了信号相位差的相关分析法和频谱分析法，并进行了仿真计算与误差分析。
The real-time shaft power is being monitored by calculating the torsional Angle and shaft speed on line. 2 the torsion signal processing method is researched on.
与各向异性磁阻效应和巨磁阻效应相比，高频磁阻抗效应传感技术灵敏度高、无巴克豪森噪声、适合常温、低磁场检测。
Compared with anisotropic magnetoresistance effect and giant magnetoresistance effect, the sensitivity using HFMI technique is much higher at room temperature and in low magnetic field.
巨磁阻效应的发现，导致了一个如何正确看待非均匀系统中磁输运性质的问题，并使电子输运状况依赖于自旋内禀属性的物理观念逐渐形成。
The discovery of giant magnetoresistance effect has attracted much attention to research of magnetic transport in inhomogeneous systems, which depends on spin of electrons.
通过磁阻对数据进行存储是一个切实可行的办法，磁阻是由威廉·汤姆逊(后称开尔文男爵)在1856年发现的一个磁场效应。
One well-established way in which data are stored employs magnetoresistance, a property discovered in 1856 by William Thomson, later Lord Kelvin.
利用钴基非晶薄带环形磁芯的巨磁阻抗效应研制了新型非接触电流传感器。
The novel non-contact type current sensor based on giant magneto-impedance (GMI) effect in Co-based amorphous ribbon toroidal core was studied.
磁阻的测量结果可以通过超导涨落和弱定域化两个效应的贡献来解释。
The data of magnetoresistance can be accounted for by the contributions from the quenching of superconducting fluctuation and weak localization.
介绍了巨磁阻抗效应，非晶材料特性，传感器的电路设计和传感器性能测试。
Giant magneto-impedance effect, the characteristic of amorphous materials, circuit design and capability test of sensor are introduced in this paper.
构造考虑齿槽效应的气隙相对磁导函数，计算出气隙磁通密度，进而用麦克斯韦应力张量法计算出电机的磁阻转矩。
The effect of stator slotting being taken into consideration, the air gap relative permeance functions are derived and the flux density in air gap are computed.
一定条件下进行电流退火能使样品的磁结构产生圆周各向异性，从而提高样品的巨磁阻抗效应。
In certain condition, DC Joule annealing can induce circular anisotropy among the ferro-magnetic layer of the samples, thus increases the ratio of the GMI effect of the samples.
研究了获得优异软磁非晶钴磷镀层的工艺条件，并对其巨磁阻抗效应进行了初步研究。
The conditions for fabricating CoP amorphous alloy deposits with excellent soft magnetic property were investigated in detail.
我们研究了三种非晶合金薄带的巨磁阻抗效应。
The GMI effects have been observed in two Co-Rich amorphous ribbons and a Fe-Rich alloy ribbon.
而后来在该类材料中发现了巨磁阻抗(GMI)效应，为开发高灵敏度磁敏传感材料提供了新途径，更成为该领域一个新的研究热点。
Later, the giant magneto-impedance effect (GMI) was found in these materials. It supplies a new approach of exploiting magnetic sensors with high sensitivity, and has become a new research field.
巨磁阻抗(GMI)传感器是基于非晶磁性材料高灵敏巨磁阻抗效应的一类新型传感器。
Giant magneto-impedance (GMI) sensor is a new type of sensor based on amorphous magnetic materials with highly sensitive giant magneto-impedance effect.
概括介绍了金属软磁合金多层薄膜巨磁电阻效应和巨磁阻抗效应的研究和应用，对多层薄膜的制备方法和表征手段作了介绍。
The particular magnetic effects, which are the giant magnetoresistance effect and the magnetic relaxation effect, of the granular films at low temperature have been studied.
进一步分析表明，基于非晶丝巨磁阻抗效应的磁敏感电流传感器技术上是可行的，需在磁屏蔽、处理软件等方面进一步改进和完善。
In conclusion, it is viable of the technology of the micro-magnetic current sensor based on AWGMI. It needs further improvement on the magnetic shield and software processing.
文中还分析了超导屏蔽的绝缘缝隙引起的误差，提出了利用有深度的超导狭缝的“磁阻衰减效应”来改善屏蔽效果的概念。
The error due to the existence of necessary insulating gap of the superconducting screen was also estimated. It has been pointed out that a gap with finite depth will pr…
文中还分析了超导屏蔽的绝缘缝隙引起的误差，提出了利用有深度的超导狭缝的“磁阻衰减效应”来改善屏蔽效果的概念。
The error due to the existence of necessary insulating gap of the superconducting screen was also estimated. It has been pointed out that a gap with finite depth will pr…
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