在这种方法下，由于各种因素的影响，双栅器件的栅长、硅岛厚度呈现出不同的缩减限制。
Under this way, the gate length and thickness of Si island of DG device show many different scaling limits for various elements.
在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；
During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.
岛面密度与膜厚的依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值。
The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates.
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