本文介绍了上海电子束离子阱(EBIT)装置微量气体注入系统的成功研制。
The gas injection system for Shanghai electron beam ion trap (EBIT) facility is successfully developed.
本文对离子注入和电子束的抗静电改性机理进行了分析，提出了选择最佳改性工艺条件的原则。
Antistatic modified mechanism of ion implantation and electron beam is reviewed in this paper. The selective principle of optimum modified technological conditions is provided.
该系统集脉冲阴极弧离子镀、直流阴极弧离子镀、磁控溅射和电子束蒸发等镀膜工艺以及气体和金属离子注入于一体。
The system include pulse cathodic arc ion deposition, direct current cathodic arc ion deposition, magnetic sputtering and electronic beam evaporation technologies.
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