本文介绍了上海电子束离子阱(EBIT)装置微量气体注入系统的成功研制。
The gas injection system for Shanghai electron beam ion trap (EBIT) facility is successfully developed.
本文对离子注入和电子束的抗静电改性机理进行了分析，提出了选择最佳改性工艺条件的原则。
Antistatic modified mechanism of ion implantation and electron beam is reviewed in this paper. The selective principle of optimum modified technological conditions is provided.
该系统集脉冲阴极弧离子镀、直流阴极弧离子镀、磁控溅射和电子束蒸发等镀膜工艺以及气体和金属离子注入于一体。
The system include pulse cathodic arc ion deposition, direct current cathodic arc ion deposition, magnetic sputtering and electronic beam evaporation technologies.
对电场漂移电子注入中的电子束物理、电子注入情况下托卡马克等离子体的平衡、电子注手器中的物理问题等进行了分析研究。
In this paper, electron beam physics, equilibrium of plasma in Tokamak under electron injection and physical problems involved in the electron injector were analytically studied.
介绍了变像管扫描相机对直线感应加速器注入器中的电子束束剖面直径的应用。
Image converter tube camera applied firstly to study changing process of profile diameter of electron beam produced by injector of accelerator is presented.
DC SC超导光阴极注入器将直流光阴极电子枪和超导加速腔结合在一起，其特点之一是适合于提供高平均流强电子束。
The precept of DC-SC photoinjector is to combine a DC photocathode electron gun and the superconducting cavity together. This scheme is specially adequate to provide the high average beam current.
本文研究了电子束蒸铝MOS结构的热电子雪崩注入的界面效应。
This Paper studies interface effect of avalanche hot electron in MOS structures.
为获得用于高平均功率自由电子激光（FEL）的高平均流强电子束，设计了一种新型的DC- SC光阴极注入器，并对其进行了优化设计和束流动力学研究。
To obtain high average current electron beams for high average power Free Electron Laser (FEL), a DC-SC photocathode injector is designed.
为获得用于高平均功率自由电子激光（FEL）的高平均流强电子束，设计了一种新型的DC- SC光阴极注入器，并对其进行了优化设计和束流动力学研究。
To obtain high average current electron beams for high average power Free Electron Laser (FEL), a DC-SC photocathode injector is designed.
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