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工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。
The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects.
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