漏区包含一交替掺杂形态区域。
The drain region includes an alternating-doping profile region.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
源区和漏区形成在鳍部内栅极的相对侧处。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
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