在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
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