在半导体中的源极区和漏极区可以限定晶体管栅极长度。
Source and drain regions in the semiconductor may define a transistor gate length.
浮动栅极定位于源极区与漏极区之间。
The floating gate is positioned between the source and drain regions.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
晶体管包含一栅结构、一源区和一漏区。
The transistor may include a gate structure, a source region, and a drain region.
源区和漏区形成在鳍部内栅极的相对侧处。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
在所述源和漏的一部分蚀刻凹槽区。
Recessed regions are etched in a portion of the source and drain.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
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