2．1．3射频磁控溅射技术（RF magnetron sputtering） 在靶阴极内侧装永久磁铁，磁铁分别放置在靶的中心和靶的边缘，且极性相反，从而产生平行于靶表面的磁场分量B，并垂.
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...能科技有限公司 Keywords: Sputtering Techniques；Enhanced Effect；Assist Ion Beam Deposition。 [gap=117]关键词 溅射技术；增强效应；离子束辅助沉积。
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磁控溅射技术 HIPIMS ; Applied Film ; magnetron sputtering
非平衡磁控溅射技术 UBMS
真空溅射技术 Sputtering
射频反应磁控溅射技术 RF reactive magnetron sputtering
离子溅射技术 ion sputtering technology
离子束溅射技术 ion beam sputtering technology
采用了离子束溅射技术 Iom Beam Sputtering
Ga2O3/Co films were deposited on the Si substrates through magnetron sputtering technique. Then the films were annealed at 950℃ for 15min at different ammonia flow rate.
利用磁控溅射技术在Si衬底上沉积Ga2O3/Co薄膜,然后在不同氨气流量下于950℃退火15min。
参考来源 - 氨气流量对GaN纳米线生长及性能的影响·2,447,543篇论文数据，部分数据来源于NoteExpress
利用非平衡磁控溅射技术在单晶硅基底上沉积了类石墨非晶碳膜。
Graphitelike carbon film was deposited on silicon substrates by unbalanced magnetron sputtering.
磁控溅射技术是现代材料制备的重要方法之一，特别是在薄膜的制备过程中显得更为重要。
The technology of magnetron sputtering is an important method of preparing new materials in modern times, especially in the process of preparation of films.
综述了各种沉积条件对磁控溅射技术生长氮化铝薄膜的微观结构，电学以及光学性能的影响。
Reviewed were the effects of various deposition conditions on microstructural, electrical and optical properties of AlN films grown by magnetron sputtering deposition technology.
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