由温度跳变引起的偏置在其达到稳定之前可能超过规定的指标。
Offset due to step changes in temperatures may exceed the specification before settling.
仪器的零点读数也会随着环境温度的变化而变化。这种效应通常称为电压偏置温度系数。
The zero reading may also vary as the ambient temperature changes. This effect is usually referred to as the temperature coefficient of the voltage offset.
将其和晶体管发射极电流方程相结合得到不同偏置下晶体管的热点温度。
And together with the transistor current equations, the hot spots temperature of a transistor under different bias is obtained.
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