快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

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其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。

The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing.

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本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响。

The effect of rapid thermal processing (RTP) on oxygen precipitates profile and denude zone (DZ) in Czochralski (CZ) silicon wafer during simulating CMOS processing is investigated.

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