快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。
The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
其主要目的是通过不同温度的热处理，发现碳对氧沉淀影响的规律，以及热处理过程中硅片样品少子寿命的变化。
The most aim is to found the rule of carbon effects oxygen deposition and the change of minor carrier lifetime in annealing.
本文研究了快速热处理工艺(RTP)在模拟的CMOS热处理工艺中对直拉硅单晶中氧沉淀和洁净区(DZ)的影响。
The effect of rapid thermal processing (RTP) on oxygen precipitates profile and denude zone (DZ) in Czochralski (CZ) silicon wafer during simulating CMOS processing is investigated.
研究了高温快速热处理（RTP）对重掺砷直拉硅片中的原生氧沉淀的消融作用。
The annihilation of grown-in oxygen precipitates in heavily As-doped CZ silicon by rapid thermal processing (RTP) was investigated.
结果表明：选择合适的热处理工艺，能使铸态合金中的沉淀相均匀析出；
The results show that the distribution of the precipitation of the alloy as-cast is homogeneous if a reasonable heat treatment procedure is chosen.
结果表明：选择合适的热处理工艺，能使铸态合金中的沉淀相均匀析出；
The results show that the distribution of the precipitation of the alloy as-cast is homogeneous if a reasonable heat treatment procedure is chosen.
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