氮化硅膜(Silicon nitridc film)是指硅氮化合物的薄膜,常用作微电子技术电绝缘层。化学计量比的氮化硅由正方氮化硅晶胞组成,多余的硅原子在其中排列成六方结构。
... 加热氮化硅;hot pressed silicon nitride 氮化硅膜;silicon nitride film 氮化硅砖;silicon nitride brick ...
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... SNF SpotNoiseFigure 点位噪音系数 SNF SiliconNitrideFilm 氮化硅膜 SNF SiliconNitrideFilm 氮化硅膜 ...
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,按照目前的制造,该装置由夹在所有这些趴在薄的低应力的氮化硅膜(SixNy)的电极之间的压电材料的氮化铝(AlN)。膜集成在小的微型加热器的频率调谐和/或温度稳定。
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By the experiment of annealing characteristic of CTP, we found that SiN film was fit to annealing under the temperature of 500℃, and the SiN/SiO2 film was fit to annealing between the temperature of 600℃and 700℃.
通过普通热退火特性实验研究,发现氮化硅膜比较适合于在500℃以内的温度下进行退火,而SiN/ SiO2双层膜由于稳定性优于SiN膜,所以比较适合于在600℃-700℃之间的温度下进行退火。
参考来源 - 晶体硅太阳电池表面钝化研究·2,447,543篇论文数据,部分数据来源于NoteExpress
玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。
The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.
我们已经发现,可以通过操作某些膜沉积参数来调节单层氮化硅膜的应力。
We have discovered that it is possible to tune the stress of a single-layer silicon nitride film by manipulating certain film deposition parameters.
探讨如何用电子回旋共振化学气相沉积(ECRCVD)设备制备非晶态氮化硅介质膜和光学膜。
This article is about how to use Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) method to prepare amorphous silicon nitride (SiN_x) film.
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