比接触电阻率 specific contact resistance
The lowest specific contact resistance 2.5×10~(-4)Ω·cm~2 of Ag(120nm)/Ni(5nm)/p-GaN was obtained at 550℃ in O_2 for 1 minute.
样品Ag(120nm)／Ni(5nm)／p-GaN，退火条件为550℃于O_2中退火1分钟，比接触电阻率达到最小值2.5×10~(-4)Ω·cm~2。
参考来源 - GaN基激光器pThe results indicated that the increase of specific contact resistivity after annealing at 800℃was due to C stacking at contact interface.
结果表明800℃退火比接触电阻的增加是由于接触界面处C堆积造成的。
参考来源 - TiC/n型4H·2,447,543篇论文数据，部分数据来源于NoteExpress
本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
给出了非合金接触情况下，PNP型HBT基极比接触电阻和接触阻抗的解析计算方法和结果。
In this paper, we proposed a theoretical method and results for calculating special contact resistance and contact impedance of base contact of a PNP type HBT.
本文叙述了对这一褐色层进行俄歇电子能谱学(aes)和化学分析电子能谱学(esca)研究结果。测定了比接触电阻。
In this paper the composition of the dark-brown layer is analysed with AES and ESCA and the specific contact resistance has also been measured.
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