本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
给出了非合金接触情况下，PNP型HBT基极比接触电阻和接触阻抗的解析计算方法和结果。
In this paper, we proposed a theoretical method and results for calculating special contact resistance and contact impedance of base contact of a PNP type HBT.
本文叙述了对这一褐色层进行俄歇电子能谱学(aes)和化学分析电子能谱学(esca)研究结果。测定了比接触电阻。
In this paper the composition of the dark-brown layer is analysed with AES and ESCA and the specific contact resistance has also been measured.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
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