使用V形槽工艺，用溅射铝的方法代替扩硼工艺制备静电感应晶体管的栅极区，简化了工艺流程，使器件在调试过程中具有很大灵活性。
The gate region was fabricated by V-groove and Al sputtering, which can simplify the process, and make devices flexible in the adjustment process.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
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