随着MOS器件尺寸逐渐减小，由热载流子效应导致的损伤变得越来越严重，已成为影响器件性能的主要失效机制之一。
With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
在功率集成电路中，高压功率器件会对周围的低压电路产生串扰，从而造成电路失效甚至闭锁等现象。
In power IC, crosstalk between high voltage power devices and low voltage devices can cause circuit operation failure and even latch-up.
这些损坏可以表现为器件的立刻失效，也可能发作在过电流冲击事情后许久才失效，缩短济南发光字的工作寿命。
These damage can be manifested as the immediate failure of the device, may also occur in the over-current shock after a long time to failure, shorten the working life of Ji'nan luminous word.
应用推荐