随着MOS器件尺寸逐渐减小，由热载流子效应导致的损伤变得越来越严重，已成为影响器件性能的主要失效机制之一。
With the decrease of the MOS devices size, hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
在功率集成电路中，高压功率器件会对周围的低压电路产生串扰，从而造成电路失效甚至闭锁等现象。
In power IC, crosstalk between high voltage power devices and low voltage devices can cause circuit operation failure and even latch-up.
这些损坏可以表现为器件的立刻失效，也可能发作在过电流冲击事情后许久才失效，缩短济南发光字的工作寿命。
These damage can be manifested as the immediate failure of the device, may also occur in the over-current shock after a long time to failure, shorten the working life of Ji'nan luminous word.
大功率激光二极管阵列的正向特性失效问题严重影响器件的成品率和可靠性。
The forward characteristics failure of the high power laser diode array severely influences the yield and reliability of devices.
常用电路保护器件的主要失效模式为短路，瞬变电压抑制器（TVS）亦不例外。
The primary failure mode of commomly used circuit protective devices is short-circuit, and so is TVS (Transient Voltage Suppressor) .
对基于印刷碳纳米管(CNT)薄膜的场发射器件的失效行为进行了研究。
The failure behavior of field emission devices based on printed carbon nanotube (CNT) films was investigated.
电疲劳失效是阻碍铁电陶瓷材料应用于微驱动和微执行器件的主要原因。
The electric fatigue and failure have significantly impeded the commercial applications of ferroelectric ceramics in micro-actuator and micro-performer devices.
综述双极器件和双极线性电路在低剂量率辐射环境下的增强损伤，它可引起系统的早期失效。
The enhanced damage was summarized for bipolar devices and bipolar linear circuits in the radiation environment of low dose rate. It could cause the early failure of systems.
通过对这些失效因素的研究并通过一定的再设计手段，可以减少热载流子效应导致的器件退化。
The device degradation induced by HCE can be reduced by studying these failure factors to resign the circuits.
实践证明，该方法在进行导电金球连接性能失效分析及LCD器件的可靠性设计及验证方面有较大的帮助。
It is shown that this method is useful for the failure analysis of LCD conductive gold spacer joint performance and the reliability design and validation of LCD devices.
济南发光字失效一是来源于电源和驱动的失效，二是来源于LED器件自身的失效。
Ji 'nan luminous word failure comes from the failure of power supply and driver, and the two comes from the failure of LED devices.
整个实验表明，用微电子测试图形监控CCD工艺、分析器件失效，是可行可靠的。
The whole experiment demonstrates that monitoring the quality of CCD process and analysing failure of the device by microelectronic test patterns is practical and reliable.
大功率器件的失效主要是由热问题引起的。
利用统计分析手段，对高功率二极管激光器封装中各工艺环节引起器件失效的原因进行了分析和归类。
Using statistics analysis method, diode laser failure states were classified and the causes of these diode laser failures were analyzed in every packaging process.
本文介绍了核辐射使电子元器件失效的机制以及离子束分析技术在抗核加固研究中的若干应用。
The mechanism of radiation damage effects on electronic devices and the applications of ion beam analysis in the investigations of radiation hardening were presented in this paper.
应力是导致焊球失效的直接原因，进而致使器件失效。
The stress is the direct cause to lead to solder balls failure, which causes microelectronic devices damage.
器件的主要失效模式是二次击穿。
温度的升高将导致器件性能的变化与衰减，甚至失效。
Temperature increasing will lead to the performance of the devices change and attenuation, and even failure.
器件键合失效主要表现为温度试验后管壳上的键合点脱落，而引起失效的原因与工艺过程和键合所涉及的材料有关。
The wire bonding failure of devices is mainly shown as the breaking off of wire bonded on the packages after temperature test, and the failure causes are related to wire bonding process and materials.
元器件失效模式分析。
早期的sJ器件有着较大的反向恢复电流，并且在某些反向恢复的情况下易于失效。
Early generation SJ devices had high reverse recovery current and failed during some reverse recovery events.
通过对序进应力加速寿命试验的研究，提出了一种快速评价微电子器件失效激活能的方法，建立了计算失效激活能的理论模型。
Basing on the study of progressive stress accelerated life test, a rapid evaluation method for electronic device's activation energy is proposed, and the theory model is constructed.
通过对序进应力加速寿命试验的研究，提出了一种快速评价半导体器件失效激活能的方法，建立了计算失效激活能的理论模型。
Basing on the study of progressive stress accelerated life test, a rapid evaluation method for electronic devices activation energy is proposed, and the theory model is constructed.
并主要针对在半导体器件中应用最为广泛的金-硅合金焊接失效模式及其解决办法进行了讨论。
The failure models of gold-silicon alloy bonding are discussed and some solving ways are proposed.
研究了低电压的静电放电(esd)对微电子器件造成的事件相关潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
简述了电子元器件失效分析的常用技术手段和失效元器件的失效现象、失效模式、失效机理。
This paper elucidates the usual technical means of the failure analysis of the electronic component and the failure phenomenon, failure mode and failure mechanism of failure electronic component.
研究了低电压的静电放电(esd)对微电子器件造成的潜在性失效。
It shows that the problem of latent failure exists for MOS circuit after the ESD stresses imposed on it.
在高功率微波作用下，半导体器件的失效问题一直困扰着人们。
The failure of semiconductor due to high power microwave has been puzzling people for a long time.
在大功率风电变换器中，由于杂散电感的存在，器件在关断过程中往往会产生超出允许范围的瞬态尖峰值，从而导致其失效和损坏。
In large production converters, due to the stray inductance, the switching transient spike is usually beyond the voltage allowed by the device, which can destroy the converter.
在大功率风电变换器中，由于杂散电感的存在，器件在关断过程中往往会产生超出允许范围的瞬态尖峰值，从而导致其失效和损坏。
In large production converters, due to the stray inductance, the switching transient spike is usually beyond the voltage allowed by the device, which can destroy the converter.
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