多晶生长暂停拉伸时,新晶粒将在柱状晶顶部晶界夹角处形核并长大,而且新晶粒的晶格取向与原有晶粒的取向无关。
When pulling halts, the combination of grains occurs, and the lattice orientation of new grain is not related to the original grains.
而且通过调节工艺参数,可制备出沿不同晶向择优生长的多晶金刚石薄膜。
Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
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