多晶生长暂停拉伸时，新晶粒将在柱状晶顶部晶界夹角处形核并长大，而且新晶粒的晶格取向与原有晶粒的取向无关。
When pulling halts, the combination of grains occurs, and the lattice orientation of new grain is not related to the original grains.
而且通过调节工艺参数，可制备出沿不同晶向择优生长的多晶金刚石薄膜。
Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
本文介绍了半导体器件中的优质多晶硅薄膜的生长以及在生长多晶硅薄膜的同时怎样来监控淀积温度；
This paper introduces how to produce high quality polysilicon film in the semiconductor devices and how to monitor the deposition temperature at the same time when film grows.
结果表明，在相同的结晶条件下各类晶体缺陷在多晶硅锭的同一横截面上呈均匀分布，但在沿结晶生长方向上不同部位存在较大差异；
The results showed that the distribution of dislocations and twins in the same cross section is even, but their density varied along the axis direction of the polysilicon ingot.
多晶硅能促进硅片内的氧沉淀成核和生长，起内吸杂作用。
The polysilicon can enhance oxygen precipitation nucleating and growing, acting as the intrinsic gettering.
采用大功率连续CO2激光熔凝掳粉末，生长得到纯度较高的太阳能多晶硅材料。
The solar energy polycrystalline silicon having higher purity grew through melting and coagulating silicon powder with high power CW CO2 laser.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。
In this paper, growth and recrystallization of silicon films on ceramic substrates were studied.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
本文全面综述了该晶体的物性与电光性能，以及多晶原料的合成与单晶的生长方法和其应用前景。
The optical, physical and electro-optical properties of ZGP single crystal, and its synthesis, growth and applications were described in detail.
文章还从实验和理论上分析了影响多晶硅薄膜生长速率的因素。
According to the theory and the experiment mentioned in this paper, the factors which effect the growth rate of polysilicon film have been analysed.
因此可以认为，在多晶硅薄膜生长的最初阶段，空间反应过程对低温晶化起重要作用。
It is considered that in the initial stage of film growth, the space reaction processes play an important role for the low-temperature crystallization of pc-Si film.
该设备应用定向固化技术，经融化、定向晶体生长，通过60小时左右铸成多晶硅铸锭。
The equipment adopts the technology of directional solidification, producing polycrystalline silicon ingots through melting and directional crystal growth in a period of approximate 60 hours.
目的 利用多晶硅纳米孔技术人工合成一种多孔隙薄膜，并在薄膜上培养狗肾脏细胞（MDCK），观察细胞生长情况及膜的生物相容性。
Objective To observe the growing shape and function of Madin-Darby canine kidney (MDCK) cells implanted on the polysilicon nanopore membrane by micro-electro-mechanical system (MEMS).
一种定向凝固生长多晶硅锭工艺，本发明属于半导体材料硅晶体的制备。
The invention discloses a technology for the directional solidification growth of polycrystalline silicon ingot, belonging to the preparation of semiconductor material silicon crystal.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
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