如果外延层与衬底是同种材料，则称为同质外延
同质外延生长 isoepitaxialgrowth ; homoepitaxial growth
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采用大气下火焰法进行了金刚石单晶膜的同质外延实验。
In this paper, experiment of homogeneous epitaxial, growing of single crystal diamond film by flame method in atmosphere was conducted.
因此抑制异常粒子的形成对提高同质外延金刚石膜的质量非常重要。
Suppressing the formation of abnormal particles is very important to improve the quality of homoepitaxial diamond.
本文对同质外延碳化硅单晶材料的生长机理和外延生长层的表征方法进行了研究。
This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer.
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