本文对同质外延碳化硅单晶材料的生长机理和外延生长层的表征方法进行了研究。
This thesis focuses on growth mechanism of SiC homogeneity epitaxy and electrical characterization methods of epilayer.
本文对薄膜沉积的形核、生长过程，对同质外延、异质外延生长过程中的某些现象进行了研究。
Some of the processes involved in thin film nucleation and growth are discussed. Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated.
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