单晶生长是指原料在高温高压下溶解在溶剂中,由于温差对流,溶液在籽晶部位达到过饱和而使籽晶生长。溶液的循环促使原料不断地溶解,晶体不断地生长。目前此法最主要的用途是生长水晶,一般说,很多氧化物单晶均可采用此法。
数值模拟了半透明单晶生长中热过程的一个例子。
An example of numerical simulation of the thermal process in semi-transparent crystal growth has been made.
根据这个关系可以成功地解释和处理硅单晶生长过程中的许多相关问题。
Many problems involved in the growing process of silicon single crystals can be explained and settled in accordance with the relation defined.
分析了化学计量比和保护气体压力对SiC单晶生长及其缺陷形成的影响。
The effects of stoichiometric proportion and ambient gas on crystal SiC, especially on the defects of SiC, were analyzed.
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