数值模拟了半透明单晶生长中热过程的一个例子。
An example of numerical simulation of the thermal process in semi-transparent crystal growth has been made.
根据这个关系可以成功地解释和处理硅单晶生长过程中的许多相关问题。
Many problems involved in the growing process of silicon single crystals can be explained and settled in accordance with the relation defined.
分析了化学计量比和保护气体压力对SiC单晶生长及其缺陷形成的影响。
The effects of stoichiometric proportion and ambient gas on crystal SiC, especially on the defects of SiC, were analyzed.
bbo单晶生长过程中包裹体的出现是影响晶体质量及制约晶体尺寸的一个重要因素。
The inclusions in BBO single crystal can influence the ultimate crystal size as well as crystal properties.
实际上，硅片本身是从一根大的硅棒上切片下来，硅棒由单晶生长而成，所以芯片本身也是一种单晶。
Indeed, the silicon wafer itself is cut from a large rod of silicon, which is grown from a single crystal, and so is itself a single crystal.
本文就其中真空度的稳定和气流控制的优化两个方面，提出了改进方案，以提高大直径单晶生长的成晶率和内在品质。
This article introduces the innovative methods in two aspects of it, which consist of the vacuum stabilized and the gas flow optimized, to improve the manufacture efficiency…
本文首次报道了新型有机非线性光学晶体N-（4-硝基苯）-3-氨基-1-丙醇（APNP）的单晶生长和非线性光学性能研究。
In this paper the growth and properties for new organic nonlinear optical crystal N-(4- nitrophenyl)-3-amino-1- propanol(APNP )are reported.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
与提拉法相比，采用坩埚密封的下降法生长sgg单晶，可以显著提高晶体产率，降低成本。
Compared with Czochralski method SGG single crystal growth with crucible capsuled vertical Bridgman method can improve crystal production and lower the cost efficiently.
通过来取低温生长和防菌措施，解决了上述问题，长出了光学质量好的LAP单晶。
By keeping the growth temperature low and preventing it from microbes, we obtained high-quality single crystals of LAP.
采用此装置已成功地生长出几种单晶光纤。
Severalsingle crystal fibers have been successfully grown with this device.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
用定向凝固技术制作单晶铸件；摸索合理可行的工艺方法；分析晶粒生长淘汰过程。
Single-crystal casts are obtained with the technology of directional solidification, the reasonable technique is discussed and the growing process of single crystal is analyzed.
发现近似平坦的生长前沿有利于单晶质量的提高。
It is found that the nearly flat growth front is in favor of improving the crystal quality.
欲生长大直径、高质量单晶，仍须对热传输和化学计量等问题进行深入研究。
The thermal transfer characteristics in growth system and stoichiometry in melt and crystal must be investigated further in order to grow high quality crystals with larger diameter.
单晶炉是生长大规模集成电路所需要硅单晶的专用设备。本文主要介绍了单晶炉的真空系统与充气系统的设计。
The single crystal furnace is a special equipment of growth single crystal for LSI. This paper mainly introduces the design of vacuum system and charge system of crystal furnace.
利用降温法生长掺尿素的UTGS单晶，测试了晶体的热释电和介电特性。结果表明，尿素的掺杂提高了晶体的热释电性能。
TGS crystals doped with urea have been grown from aqueous solution. The pyroelectric properties of UTGS crystals are determined. The results show that UTGS has better pyroelectric properties.
对该突变体酶进行了晶体生长研究，获得了较大的单晶体。
The double mutant enzyme was crystallized and large single crystals were obtained.
本文用晶体区熔生长理论对激光加热基座法生长的单晶光纤形状稳定问题作了研究。
In the paper, the shape stability of single crystal fibers grown by laser heating float zone growth method is studied with zone melt growth theory.
本文全面综述了该晶体的物性与电光性能，以及多晶原料的合成与单晶的生长方法和其应用前景。
The optical, physical and electro-optical properties of ZGP single crystal, and its synthesis, growth and applications were described in detail.
直拉法生长单晶硅是目前最常用最成熟的工业化方法。
Growth of Czochralski silicon crystals is the most common and perfect one in industry.
单晶硅晶体生长炉具有非线性和大纯滞后的特点，应用常规pid控制难以实现有效控制。
It is difficult to apply general PID control to the equipment of monocrystalline silicon growth with the nonlinear and great pure hysteresis characteristics.
用新的溶剂变更法生长TGS单晶，即在TGS水溶液中缓慢加入无水乙醇而使TGS结晶析出。
TGS single crystals can be grown by the method of changing solvent, i. e. , adding ethyl alcohol to the aqueous solution of TGS.
本文研究了电子辐照在氮保护气氛中生长的直拉硅单晶中引入的深能级。
The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.
本文介绍了采用恒温蒸发与变更溶剂相结合生长ATGS单晶的方法，并对其生长机理作了新的解释。
The method of growing ATGS by evaporating at a fixed temperature and changing the solvent is discussed and its growing mechanism is given a new interpretation.
在包含含有氮气的混合气体b的气氛下，在总压为300气压以上、2000气压以下的压力下，生长氮化镓单晶。
Gallium nitride single crystal is grown in atmosphere composed of gases mixture 'B' containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower.
在包含含有氮气的混合气体b的气氛下，在总压为300气压以上、2000气压以下的压力下，生长氮化镓单晶。
Gallium nitride single crystal is grown in atmosphere composed of gases mixture 'B' containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower.
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