氧化铟锡 Indium tin oxide ; ITO ; [电子] tin indium oxide
锑化铟 InSb-In
砷化铟 [无化] indium arsenide ; InAs ; indium monoarsenide
磷化铟 InP ; [无化] indium phosphide
氧化铟镓锌 Indium Gallium Zinc Oxide ; IGZO
砷化铟镓 Indium Gallium Arsenide ; InGaAs
氮化铟镓 InGaN ; GaInN
氧化铟 [无化] indium oxide ; Indium tin oxide
氯化铟 [无化] indium chloride ; Indium trichloride
对锑化铟-铟共晶薄膜磁阻元件的齿轮转速传感器电路进行了研究。
The gear velocity sensor made up of a InSn-In eutectic film magnetoresistor(MR) is studied.
为了获得高质量的晶体，需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals.
德国汉堡大学的昆德勒及其同事，也曾对砷化铟—属混合结构的EMR做过广泛的研究。
Dirk Grundler and his colleagues at Hamburg University in Germany have carried out extensive studies of EMR in indium arsenide-metal hybrid structures.
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