氧化铟锡 Indium tin oxide ; ITO ; IMITO ; [电子] tin indium oxide
锑化铟 in sb ; InSb-In ; InSn
砷化铟 [无化] indium arsenide ; InAs ; indiumarsenideCAS ; indium monoarsenide
磷化铟 InP ; [无化] indium phosphide ; IIlP
氧化铟镓锌 Indium Gallium Zinc Oxide ; IGZO
砷化铟镓 Indium Gallium Arsenide ; InGaAs
氢氧化铟 Hydroxid Indium
氮化铟镓 InGaN ; GaInN
氧化铟 [无化] indium oxide ; Indium tin oxide ; indiumtrioxide
氯化铟 [无化] indium chloride ; Indium trichloride ; InCl
对锑化铟-铟共晶薄膜磁阻元件的齿轮转速传感器电路进行了研究。
The gear velocity sensor made up of a InSn-In eutectic film magnetoresistor(MR) is studied.
德国汉堡大学的昆德勒及其同事，也曾对砷化铟—属混合结构的EMR做过广泛的研究。
Dirk Grundler and his colleagues at Hamburg University in Germany have carried out extensive studies of EMR in indium arsenide-metal hybrid structures.
锑化铟红外焦平面探测器将要在寿命周期中于室温到77 K的温度范围内工作几千次。
An InSb infrared focal plane array (IRFPA) detector is required to operate in the temperature range from room temperature to 77k for several thousand times in its lifetime period.
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