对锑化铟-铟共晶薄膜磁阻元件的齿轮转速传感器电路进行了研究。
The gear velocity sensor made up of a InSn-In eutectic film magnetoresistor(MR) is studied.
为了获得高质量的晶体，需要解决大尺寸锑化铟晶体生长过程中的精确等径控制问题。
To obtain high quality InSb crystals, a precision diameter-constant control technology is required in the growth process of large size InSb crystals.
德国汉堡大学的昆德勒及其同事，也曾对砷化铟—属混合结构的EMR做过广泛的研究。
Dirk Grundler and his colleagues at Hamburg University in Germany have carried out extensive studies of EMR in indium arsenide-metal hybrid structures.
锑化铟红外焦平面探测器将要在寿命周期中于室温到77K的温度范围内工作几千次。
An InSb infrared focal plane array (IRFPA) detector is required to operate in the temperature range from room temperature to 77k for several thousand times in its lifetime period.
锑化铟既作霍尔元件测量了磁感应强度，又作磁敏电阻研究了其阻值随磁场的变化规律。
InSb was used as Hall-element to measure magneto induction as well as used as magneto-sensitive to study the variety rule of its resistant when the magneto field was changed.
本文首先介绍了与锑化铟有关的基本电磁原理，在此基础上对锑化铟磁阻转速传感器原理进行了分析。
Firstiy, the paper introduces the basic electromagnetism theory about InSb, and then analyze the principle of InSb magnetosensitive rev sensor.
Luxtera的设计消除了使用昂贵的III - V化合物半导体材料(如砷化镓和磷化铟)的必要。
Luxtera's design eliminates the need to use expensive group iii-v compounds, such as gallium arsenide (GaAs) and indium phosphate (InP), in the semiconductors.
利用高能反射电子衍射技术（RHEED），研究了硅、锑化铟、碲镉汞样品逐次化学腐蚀后的切割表面损伤。
Surface damage caused by cutting on Si, InSb, HgCdTe has been studied by Reflection High Energy Electron Diffraction (RHEED) after step-etching the samples.
本文介绍了锑化铟磁阻型光电传感器的结构及工作原理，并对锑化铟磁阻型光电传感器的输出特性进行了研究。
The paper introduce the configuration and theory of the InSb magnetoresistance IR-Photoelectrie sensor, and study the output characteristic of the sensor.
设计了三种不同的信号处理电路，选择了直接耦合放大型信号处理电路作为锑化铟磁阻转速传感器的使用电路。
And designs 3 differ single processing circuit, selects the directly coupling amplify single processing circuit for this sensor and optimized it for practicality.
本文提出了半导体锑化铟单晶位错显示中对样品处理的一种新方法，并通过大量的实验证实了这种方法的可行性。
The paper presented a new method for sample treatment in semiconductor indium antimonide single crystal dislocation display, and proveded of feasibility this method with large number experiments.
光伏电池依赖于非晶态或晶态的硅，碲化镉或者硒化、硫化铜铟。
Photovoltaic cells rely on amorphous or crystalline silicon, cadmium telluride, or copper indium selenide and sulfide.
目前为止，光电薄膜最有效的材质是铜铟硒化镓（CIGS）。
The most effective material for thin-film photovoltaics so far is copper indium gallium selenide (known as CIGS).
由于钼元素参与镓、铟和铊的原子化反应，从而改变了原子化机理，提高了原子化效率。
Because molybdenum participated in atomization reaction of gallium, indium and thallium, it can change atomization mechanism and improve atomization efficiency.
应用纳米铟、铋、锡在水相中成功地促进了多种羰基化合物和巴豆基溴的丁烯基化反应，在短时间内得到了高产率的高烯丙醇。
Indium, tin and bismuth nanoparticles successfully mediated crotylation of carbonyl compounds in water to afford the corresponding homoallylic alcohols with good to excellent yields in a short time.
铟是碱性锌锰电池无汞化代汞添加剂必不可少的组分。
Indium was a necessary component of substitutes for the mercury free alkaline zinc manganese battery.
并就如何提高铟回收率及解决有机相乳化、者化等问题进行了探讨。
It also discusses how to raise recovery rate and resolve the emulsification and aging of organic phase.
并就如何提高铟回收率及解决有机相乳化、者化等问题进行了探讨。
It also discusses how to raise recovery rate and resolve the emulsification and aging of organic phase.
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