光敏三极管与发光二极管沿径向安装于端盖上形成测量头。
The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.
以光敏二极管和光敏三极管的伏安特性作为设计实验的基础。
The volt-ampere characteristic property with photodiode and photosensitive audion is the basis designing an experiment's.
本文介绍了注入光敏器件的物理基础、注入光敏三极管的基本结构和特性。
The physical fundamentals of the injecting photosensitive device, the basic configuration and characteristics of the injecting phototransistor have been introduced.
应用推荐