光敏三极管与发光二极管沿径向安装于端盖上形成测量头。
The phototransistor and the light emitting diode are arranged on the end cover along a radical direction to form a measurement head.
以光敏二极管和光敏三极管的伏安特性作为设计实验的基础。
The volt-ampere characteristic property with photodiode and photosensitive audion is the basis designing an experiment's.
本文介绍了注入光敏器件的物理基础、注入光敏三极管的基本结构和特性。
The physical fundamentals of the injecting photosensitive device, the basic configuration and characteristics of the injecting phototransistor have been introduced.
对影响光敏三极管光电响应速度的器件结构进行了理论和计算机数值分析。
The dependece of the response speed on structure parameters of Si phototransistors is discussed based on theoretical analysis and numerical method by a computer.
利用光敏三极管代替硅光电池和光敏二极管来测试单缝和双缝衍射的光强分布。
This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode.
该光敏三极管是通过安装在洞上方的情况下，密封在一个黄铜管，这是手绘的黑色内。
The phototransistor was installed through holes in the top of the case, and enclosed in a brass tube that was painted black inside and out.
荧光信号检测系统，采用硅光敏三极管作为荧光信号探测器，8031单片机来测量荧光寿命。
The system of fluorescence measurement uses the silicon photosensitive three-electrode tube as the detection of fluorescence signal. The 8031singlechip is used to measure fluorescence lifetime.
设计方案中，主要采用AD590和光敏三极管作为检测单元，并运用了MC 14433、74ls160等集成器件。
The Design project with the main use of AD590 and phototransistor as a test unit has still used the MC14433, 74ls160, such as integrated device.
设计方案中，主要采用AD590和光敏三极管作为检测单元，并运用了MC 14433、74ls160等集成器件。
The Design project with the main use of AD590 and phototransistor as a test unit has still used the MC14433, 74ls160, such as integrated device.
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